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Ships within 48 hours · Estimated delivery Sep 21 - Sep 26
edge® is incredibly versatile
up to 3 points (5 points*) calibration
Optional Accessory: 1
Flatness (TIR) < 12 um
Control of several external instruments: rotating electrode (RDE)
Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick SOS edge® is incredibly versatileSpecifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0. 5 um + 10% Resistivity: > 100 ohm. cm Micro particle density ( for particles > 2 um) < 2 cm^2 Sapphire Wafer: R plane (1 102) with single flat Wafer size: 10x10 x 0. 46 mm thickness Front surface: Epi polished (Ra < = 4 nm) Back surface: Optical grade polish TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um MPN:
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